SEISMIC VULNERABILITY ANALYSIS OF CABLE-STAYED BRIDGE DURING ROTATION CONSTRUCTION

          Due to the swivel construction, the structural redundancy of cable-stayed bridge is reduced, and its seismic vulnerability is significantly higher than that of non-swirling construction structure and its own state of formation. Therefore, it is particularly important to study the damage changes of each component and stage system during the swivel construction of cable-stayed bridge under different horizontal earthquakes. Based on the construction of Rotary Cable-stayed Bridge in Haxi Street, the calculation formula of damage exceeding probability is established based on reliability theory, and the damage calibration of cable-stayed bridge components is carried out, and the finite element model of cable-stayed bridge rotating structure is established. The vulnerable parts of the main tower and the stay cable components of the cable-stayed bridge are identified and the incremental dynamic analysis is carried out. Finally, the seismic vulnerability curves of the main tower section, the stay cable and the rotating system are established. The results of the study show that the vulnerable areas of the H-shaped bridge towers are the abrupt changes in the main tower section near the upper and lower beams, and the vulnerable diagonal cables are the long cables anchored to the beam ends and the short cables near the main tower；At the same seismic level, the damage exceedance probability of main tower vulnerable section of cable-stayed bridge under transverse earthquake is greater than that under longitudinal earthquake, the damage exceedance probability of vulnerable stay cables under transverse seismic action is less than that under longitudinal seismic action；On the premise of the same damage probability, the required ground motion intensity of the system can be reduced by 0.35g at most compared with the component；Under the same seismic intensity, the system damage probability is 6.60 % higher than the component damage probability at most. The research results have reference significance for the construction of rotating cable-stayed bridges in areas lacking seismic records

30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes

We report that 30-inch scale multiple roll-to-roll transfer and wet chemical doping considerably enhance the electrical properties of the graphene films grown on roll-type Cu substrates by chemical vapor deposition. The resulting graphene films shows a sheet resistance as low as ~30 Ohm/sq at ~90 % transparency which is superior to commercial transparent electrodes such as indium tin oxides (ITO). The monolayer of graphene shows sheet resistances as low as ~125 Ohm/sq with 97.4% optical transmittance and half-integer quantum Hall effect, indicating the high-quality of these graphene films. As a practical application, we also fabricated a touch screen panel device based on the graphene transparent electrodes, showing extraordinary mechanical and electrical performances

Balancing Light Absorptivity and Carrier Conductivity of Graphene Quantum Dots for High-Efficiency Bulk Heterojunction Solar Cells

Graphene quantum dots (GQDs) have been considered as a novel material because their electronic and optoelectronic properties can be tuned by controlling the size and the functional groups of GQDs. Here we report the synthesis of reduction-controlled GQDs and their application to bulk heterojunction (BHJ) solar cells with enhanced power conversion, efficiency (PCE). Three different types of GQDs-graphene oxide quantum dots (GOQDs), 5 h reduced GQDs, and 10 h reduced GQDs-were tested in BM solar cells, and the results indicate that GQDs play an important role in increasing optical absorptivity and charge carrier extraction of the BIB solar cells. The enhanced optical absorptivity by rich functional groups in GOQDs increases short-circuit current, while the improved conductivity of reduced GQDs leads to the increase of fill factors. Thus, the reduction level of GQDs needs to be intermediate to balance the absorptivity and conductivity. Indeed, the partially reduced GQDs yielded the outstandingly improved PCE of 7.60% in BM devices compared to a reference device without GQDs (6.70%)

Surface-engineered graphene quantum dots incorporated into polymer layers for high performance organic photovoltaics

Graphene quantum dots (GQDs), a newly emerging 0-dimensional graphene based material, have been widely exploited in optoelectronic devices due to their tunable optical and electronic properties depending on their functional groups. Moreover, the dispersibility of GQDs in common solvents depending on hydrophobicity or hydrophilicity can be controlled by chemical functionalization, which is particularly important for homogeneous incorporation into various polymer layers. Here we report that a surface-engineered GQD-incorporated polymer photovoltaic device shows enhanced power conversion efficiency (PCE), where the oxygen-related functionalization of GQDs enabled good dispersity in a PEDOT:PSS hole extraction layer, leading to significantly improved short circuit current density (J(sc)) value. To maximize the PCE of the device, hydrophobic GQDs that are hydrothermally reduced (rGQD) were additionally incorporated in a bulk-heterojunction layer, which is found to promote a synergistic effect with the GQD-incorporated hole extraction layer

Balancing Light Absorptivity and Carrier Conductivity of Graphene Quantum Dots for High-Efficiency Bulk Heterojunction Solar Cells

Graphene quantum dots (GQDs) have been considered as a novel material because their electronic and optoelectronic properties can be tuned by controlling the size and the functional groups of GQDs. Here we report the synthesis of reduction-controlled GQDs and their application to bulk heterojunction (BHJ) solar cells with enhanced power conversion efficiency (PCE). Three different types of GQDsgraphene oxide quantum dots (GOQDs), 5 h reduced GQDs, and 10 h reduced GQDswere tested in BHJ solar cells, and the results indicate that GQDs play an important role in increasing optical absorptivity and charge carrier extraction of the BHJ solar cells. The enhanced optical absorptivity by rich functional groups in GOQDs increases short-circuit current, while the improved conductivity of reduced GQDs leads to the increase of fill factors. Thus, the reduction level of GQDs needs to be intermediate to balance the absorptivity and conductivity. Indeed, the partially reduced GQDs yielded the outstandingly improved PCE of 7.60% in BHJ devices compared to a reference device without GQDs (6.70%)

An All-Organic Composite System for Resistive Change Memory via the Self-Assembly of Plastic-Crystalline Molecules

An all-organic composite system was introduced as an active component for organic resistive memory applications. The active layer was prepared by mixing a highly polar plastic-crystalline organic molecule (succinonitrile, SN) into an insulating polymer (poly­(methyl methacrylate), PMMA). As increasing concentrations of SN from 0 to 3.0 wt % were added to solutions of different concentrations of PMMA, we observed distinguishable microscopic surface structures on blended films of SN and PMMA at certain concentrations after the spin-casting process. The structures were organic dormant volcanos composed of micron-scale PMMA craters and disk type SN lava. Atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), scanning electron microscopy (SEM), and energy dispersive X-ray spectrometer (EDX) analysis showed that these structures were located in the middle of the film. Self-assembly of the plastic-crystalline molecules resulted in the phase separation of the SN:PMMA mixture during solvent evaporation. The organic craters remained at the surface after the spin-casting process, indicative of the formation of an all-organic composite film. Because one organic crater contains one SN disk, our system has a coplanar monolayer disk composite system, indicative of the simplest composite type of organic memory system. Current–voltage (<i>I</i>–<i>V</i>) characteristics of the composite films with organic craters revealed that our all-organic composite system showed unipolar type resistive switching behavior. From logarithmic <i>I</i>–<i>V</i> characteristics, we found that the current flow was governed by space charge limited current (SCLC). From these results, we believe that a plastic-crystalline molecule–polymer composite system is one of the most reliable ways to develop organic composite systems as potential candidates for the active components of organic resistive memory applications

Length-dependent thermal conductivity in suspended single-layer graphene.

Graphene exhibits extraordinary electronic and mechanical properties, and extremely high thermal conductivity. Being a very stable atomically thick membrane that can be suspended between two leads, graphene provides a perfect test platform for studying thermal conductivity in two-dimensional systems, which is of primary importance for phonon transport in low-dimensional materials. Here we report experimental measurements and non-equilibrium molecular dynamics simulations of thermal conduction in suspended single-layer graphene as a function of both temperature and sample length. Interestingly and in contrast to bulk materials, at 300 K, thermal conductivity keeps increasing and remains logarithmically divergent with sample length even for sample lengths much larger than the average phonon mean free path. This result is a consequence of the two-dimensional nature of phonons in graphene, and provides fundamental understanding of thermal transport in two-dimensional materials